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THROUGH-TYPE ELECTRODE MANUFACTURING METHOD AND THROUGH-TYPE ELECTRODE MANUFACTURED THEREBY

机译:贯穿式电极的制造方法及由此制造的贯穿式电极

摘要

Disclosed are a through-type electrode manufacturing method and a through-type electrode manufactured thereby. According to an embodiment of the present invention, the through-type electrode manufacturing method comprises: preparing a main wafer; attaching an auxiliary wafer to both sides of the main wafer; removing a part of the auxiliary wafer to produce a substrate; forming a through hole in the substrate; depositing seed metal on one surface of the substrate to form a seed metal layer on one surface of the substrate and the inlet of the through hole; primarily growing an electrode material in the through hole of the substrate; closing the through hole of the substrate with a finishing layer and then secondarily growing the electrode material in the through hole of the substrate to form an electrode layer; removing the seed metal layer and the finishing layer; and removing the rest of the auxiliary wafer.;COPYRIGHT KIPO 2020
机译:公开了一种贯通型电极的制造方法以及由此制造的贯通型电极。根据本发明的实施例,贯通型电极的制造方法包括:准备主晶片;以及将辅助晶片附着到主晶片的两侧;去除一部分辅助晶片以产生衬底;在基板上形成通孔;在衬底的一个表面上沉积种子金属,以在衬底的一个表面和通孔的入口上形成种子金属层。首先在基板的通孔中生长电极材料;用精加工层封闭基板的​​通孔,然后在基板的通孔中二次生长电极材料以形成电极层;去除种子金属层和精加工层;并移除其余的辅助晶圆。; COPYRIGHT KIPO 2020

著录项

  • 公开/公告号KR20200030405A

    专利类型

  • 公开/公告日2020-03-20

    原文格式PDF

  • 申请/专利权人 EPG;

    申请/专利号KR20180109235

  • 申请日2018-09-12

  • 分类号H01L21/768;H01L21/02;H01L21/18;H01L21/3065;

  • 国家 KR

  • 入库时间 2022-08-21 11:07:32

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