CRUCIBLE FOR SINGLE CRYSTAL GROWTH AND SILICON CARBIDE SINGLE CRYSTAL GROWTH APPARATUS INCLUDING SAME

摘要

The present invention relates to a crucible having an inner space unit formed to charge molten metal containing silicon carbide (SiC) or silicon by being provided in a reaction chamber under a constant pressure atmosphere. According to the present invention, the crucible has an inner circumferential surface formed in a concave-convex shape that a concave portion and a convex portion repeat on the basis of the cross-section, and the concave portion and the convex portion are formed to have a constant length in a vertical direction.;COPYRIGHT KIPO 2020