METHOD FOR QUANTITATIVE ANALYSIS OF CRYSTAL FRACTION IN AMORPHOUS OXIDE SEMICONDUCTOR LAYER

摘要

An object of the present invention is to identify crystal distribution over a large area of an amorphous oxide layer and quantify crystal fraction while overcoming disadvantages of existing methods used to observe the crystal distribution in the amorphous oxide layer. The present invention provides a method for quantitative analysis of the crystal fraction in an amorphous oxide semiconductor layer, which comprises the following steps of: (a) obtaining a crystal distribution image in an amorphous layer by selecting only a diffraction pattern of a crystal region existing in the diffraction pattern of an amorphous region in a transmission electron microscope (TEM) diffraction pattern image of the amorphous oxide semiconductor layer as an aperture of an objective aperture; and (b) quantifying the crystal fraction in the amorphous layer by converting the crystal distribution of the image obtained from (a) into a binary picture and then image processing the same.;COPYRIGHT KIPO 2020