Matrix Calibration for the Quantitative Analysis of Layered Semiconductors by Secondary Ion Mas Spectrometry

摘要

Analyses of AlxGa1-xAs matrices by secondary ion mass spectrometry (SIMS) have show that secondary ion yields and sputtering yields are linearly dependent on the sample composition. Calibration lines for Be, Si, B, P, and As were obtained using practical ion yields, relative sensitivity factors, and relative ion yields. Calibration lines using relative ion yields provided superior precision and accuracy. Relative ion yield and relative sputtering yield calibration lines were applied to the determination of a 11B+ implant into a multilayer-multimatrix sample. (Author)