Method for preparation of vanadium-doped silicon carbide powder and silicon carbide powder thereby electrically insulated heat radiating filler using the same

摘要

The present invention comprises the steps of (I) mixing silicon powder, carbon black powder and vanadium metal powder, followed by primary heat treatment at 1,350 to 1,800°C; (II) after the first heat treatment, a second heat treatment at 1,800 ~ 2,000 ℃; And (III) after the second heat treatment, performing a decarburization process at 600 ~ 1,000 ℃; provides a method for producing a vanadium-doped silicon carbide powder comprising a. According to the present invention, it is possible to obtain a vanadium-doped silicon carbide powder in which vanadium is uniformly distributed in a silicon carbide lattice by a direct carbonization method, and also by using a vanadium-doped silicon carbide powder obtained according to the production method of the present invention 1 By showing a high resistance value of x 10 ¹¹ Ωcm or more, it is possible to provide a heat dissipation filler that satisfies both excellent thermal conductivity and insulation.