首页> 外国专利> Method for preparation of vanadium-doped silicon carbide powder and silicon carbide powder thereby, electrically insulated heat radiating filler using the same

Method for preparation of vanadium-doped silicon carbide powder and silicon carbide powder thereby, electrically insulated heat radiating filler using the same

机译:制备钒掺杂的碳化硅粉的方法及由此制备的碳化硅粉,使用其的电绝缘散热填料

摘要

The present invention comprises the steps of (I) mixing silicon powder, carbon black powder and vanadium metal powder, followed by primary heat treatment at 1,350 to 1,800°C; (II) after the first heat treatment, a second heat treatment at 1,800 ~ 2,000 ℃; And (III) after the second heat treatment, performing a decarburization process at 600 ~ 1,000 ℃; provides a method for producing a vanadium-doped silicon carbide powder comprising a. According to the present invention, it is possible to obtain a vanadium-doped silicon carbide powder in which vanadium is uniformly distributed in a silicon carbide lattice by a direct carbonization method, and also by using a vanadium-doped silicon carbide powder obtained according to the production method of the present invention 1 By showing a high resistance value of x 10
机译:本发明包括以下步骤:(I)混合硅粉,炭黑粉和钒金属粉,然后在1,350至1,800℃下进行初步热处理; (II)第一次热处理后,在1800〜2000℃进行第二次热处理; (Ⅲ)第二次热处理后,在600〜1000℃进行脱碳过程;提供了一种制备含钒的碳化硅粉末的方法。根据本发明,可以通过直接碳化法获得钒掺杂的碳化硅粉末,其中钒通过碳化法均匀地分布在碳化硅晶格中,并且还可以使用根据本发明获得的钒掺杂的碳化硅粉末。本发明的制造方法1通过显示高电阻值x 10

著录项

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号