Selective growth of SiO2 on dielectric surfaces in the presence of copper

摘要

Methods and apparatus are provided for selectively depositing silicon oxide on dielectric surfaces for a metal-containing surface, such as copper. The methods include exposing a substrate having a dielectric surface and a copper surface to a copper blocker such as an alkyl thiol to selectively adsorb on a copper surface, exposing the substrate to a silicon-containing precursor to deposit silicon oxide, and forming silicon oxide Thus exposing the substrate to a weak oxidant gas and igniting the plasma to convert the adsorbed silicon-containing precursor, and exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas. .