首页> 外国专利> OVERLAY ERROR PREDICTION METHOD AND OVERLAY ERROR CORRECTION METHOD FOR SEMICONDUCTOR DEVICE

OVERLAY ERROR PREDICTION METHOD AND OVERLAY ERROR CORRECTION METHOD FOR SEMICONDUCTOR DEVICE

机译:半导体器件的叠加误差预测方法和叠加误差校正方法

摘要

The overlay error prediction method and overlay error correction method of a semiconductor device according to the present invention first use a wafer-level overlay error modeling method that corrects with one overlay error model using all overlay errors in the wafer and overlay errors belonging to each field. A field-level overlay error modeling method is performed to establish an overlay error model for each field. Thereafter, the regression coefficients derived from the wafer level overlay error modeling method and the field level overlay error modeling method are averaged to finally obtain the overlay error modeling method according to the present invention. Accordingly, since the present invention can simultaneously reflect the tendency of the overall overlay error in the wafer and the tendency of the overlay error in each field, it is possible to perform more optimized correction for a wafer in which the overlay error is not measured. In particular, in the case of the present invention, about 15.9% is improved compared to the linear least squares regression (OLS-based) model in terms of mean square error (MSE) through the experimental example, and in terms of mean absolute error (MAE) and |mean|+3σ It was confirmed that 8.3% and 7.8% were improved, respectively, and it was confirmed that there is an effect of minimizing the deformation between wafers in the lot.
机译:根据本发明的半导体器件的覆盖误差预测方法和覆盖误差校正方法首先使用晶片级覆盖误差建模方法,该方法利用晶片中的所有覆盖误差和属于每个领域的覆盖误差以一个覆盖误差模型进行校正。 。执行场级覆盖误差建模方法以为每个场建立覆盖误差模型。此后,对从晶片级覆盖误差建模方法和场级覆盖误差建模方法得出的回归系数进行平均,以最终获得根据本发明的覆盖误差建模方法。因此,由于本发明可以同时反映出晶片中的整体重叠误差的趋势和每个场中的重叠误差的趋势,因此可以对未测量重叠误差的晶片进行更优化的校正。特别地,在本发明的情况下,相对于线性最小二乘回归(基于OLS)模型,在通过实验示例的均方误差(MSE)和平均绝对误差方面,改进了约15.9% (MAE)和| mean | +3σ被确认分别提高了8.3%和7.8%,并且确认了具有使批次中的晶片之间的变形最小化的效果。

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