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Prediction and correction of overlay errors induced by etching process drift

机译:蚀刻工艺漂移引起的覆盖误差的预测与校正

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A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). Driven by the growing demand of manufacturing modern integrated circuits with ever shrinking sizes, lithographic technologies that can offer higher resolution and better reliability are under a fast-paced and extensive development. One of such advancing lithographic technologies is the extreme ultra-violet lithography (also known as EUV or EUVL), which allows for sub-10 nanometre (nm) scale resolution. In lithographic processes, it is desirable frequently to make measurements of the structures created, e.g., for process control and verification. Driven by such a demand, various inspection and metrology tools have been made available, including scanning electron microscopes, which are often used to measure critical dimension (CD), and specialized optical metrology tools, such as various forms of scatterometers, to measure overlay errors.
机译:光刻设备是一种机器,该机器将所需图案施加到基板上,通常在基板的一部分上。例如,可以在集成电路(IC)的制造中使用光刻设备。由于生产现代综合电路的需求不断增长,可以提供更高分辨率和更好可靠性的平版技术在快节奏和广泛的发展中。这种推进的平版技术之一是极端的紫外光刻(也称为EUV或EUV1),其允许亚10纳米(NM)刻度分辨率。在光刻过程中,频繁地理想地进行测量,例如用于过程控制和验证。通过这种需求驱动,已经提供了各种检查和计量工具,包括扫描电子显微镜,这些显微镜经常用于测量关键尺寸(CD),以及诸如各种形式的散射仪的专用光学计量工具,以测量覆盖误差。

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    《Research Disclosure》 |2021年第683期|997-1000|共4页
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