DIRECT MEASUREMENT TEST STRUCTURES FOR MEASURING STATIC RANDOM ACCESS MEMORY STATIC NOISE MARGIN

摘要

A test structure for measuring the static noise margin (SNM) for one or more static random access memory (SRAM) cells may include a first transmission gate (TG) and a second TG electrically coupled to each SRAM cell. . In one implementation, the interconnection between the output of the first inverter of the SRAM cell and the input of the second inverter may be electrically disconnected using a cutoff. During operation of the SRAM cell, internal storage nodes within the SRAM cell may be electrically coupled to, for example, external pins and to the test fixture via a first TG and a second TG. Electrical parameters such as voltage can be measured at internal storage nodes via external pins and can be used to calculate the SNM of the SRAM cell.