首页> 外国专利> MANUFACTURING METHOD OF ZINC OXIDE NANO ROD ARRAYS AND NANO ROD ARRAYS MADE BY THE SAME AND SEMICONDUCTOR DEVICE USING THE SAME

MANUFACTURING METHOD OF ZINC OXIDE NANO ROD ARRAYS AND NANO ROD ARRAYS MADE BY THE SAME AND SEMICONDUCTOR DEVICE USING THE SAME

机译:氧化锌纳米棒阵列和纳米棒阵列的制造方法,半导体器件使用相同的

摘要

The present invention relates to a method for producing a zinc oxide nanorod array that grows in a predetermined pattern in a selective region of a nitride semiconductor, and to a zinc oxide nanorod array produced thereby. Zinc oxide nanorod array manufacturing method according to the present invention comprises preparing a growth substrate having a first surface and a second surface; Growing a nitride semiconductor layer on the first surface of the growth substrate; Disposing a support substrate on the nitride semiconductor layer; Forming a laser control pattern on a second surface of the growth substrate; The method may include removing the growth substrate from the nitride semiconductor layer by irradiating a laser from a second surface of the growth substrate having the laser blocking pattern.
机译:本发明涉及在氮化物半导体的选择区域中以预定图案生长的氧化锌纳米棒阵列的制造方法,以及由此制造的氧化锌纳米棒阵列。根据本发明的氧化锌纳米棒阵列的制造方法,包括制备具有第一表面和第二表面的生长基板;在生长衬底的第一表面上生长氮化物半导体层;在氮化物半导体层上设置支撑衬底;在生长衬底的第二表面上形成激光控制图案;该方法可以包括通过从具有激光阻挡图案的生长衬底的第二表面照射激光来从氮化物半导体层去除生长衬底。

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