OXIDE FILM REMOVING METHOD OXIDE FILM REMOVING APPARATUS CONTACT FORMING METHOD AND CONTACT FORMING SYSTEM

摘要

[Task] CD loss is suppressed when the silicon-containing oxide film formed on the silicon portion of the bottom of the pattern is removed. [Solutions] In a substrate to be processed having an insulating film having a predetermined pattern formed thereon and having a silicon-containing oxide film formed on a silicon portion at the bottom of the pattern, a method of removing an oxide film to remove the silicon-containing oxide film is performed on silicon formed at the bottom of the pattern. The step of removing the containing oxide film by ionic anisotropic plasma etching by plasma of a carbon-based gas, the step of removing the remainder of the silicon-containing oxide film after anisotropic plasma etching by chemical etching, and the residue remaining after chemical etching It has a process of removing.