- TUNNELING FIELD EFFECT TRANSISTORS TFETS WITH UNDOPED DRAIN UNDERLAP WRAP-AROUND REGIONS

摘要

Tunneling field effect transistors (TFETs) with undoped drain underwrap wrap-around regions are described. For example, a tunneling field effect transistor (TFET) includes a homojunction active region formed over a substrate. The homojunction active region includes a doped source region, an undoped channel region, a wrap-around region, and a doped drain region. A gate electrode and a gate dielectric layer are formed between the source region and the wrap-around region on the undoped channel region.