Cleaning process to remove boron-carbon residues in the processing chamber at high temperatures

摘要

Embodiments of the present invention generally relate to methods for removing a boron-carbon layer from the surface of a processing chamber using water vapor plasma treatment. In one embodiment, a method for cleaning the surface of a processing chamber includes positioning a pedestal at a first distance from a showerhead, and exposing the deposited boron-carbon layer to a first plasma process, wherein the One plasma process includes generating a plasma comprising water vapor and a first carrier gas by biasing the showerhead disposed above the pedestal, and positioning the pedestal at a second distance from the showerhead And exposing the deposited boron-carbon layer to the second plasma process, wherein the second plasma process biases the showerhead and biases the side electrode against the showerhead, thereby increasing water vapor and the second. And generating a plasma containing a carrier gas.