METHOD OF PREPARING NANONET TRANSITION METAL DICHALCOGENIDE THIN FILM AND PHOTOTRANSISTOR INCLUDING NANONET TRANSITION METAL DICHALCOGENIDE THIN FILM THEREBY

摘要

The present application is a step of laminating a transition metal chalcogen compound on a substrate; Laminating a protective layer on the transition metal chalcogen compound; Laminating a block copolymer on the protective layer; The block copolymer is self-assembled to form a circular nanonet structure pattern; Etching the protective layer using the patterned block copolymer as a mask; Etching the transition metal chalcogen compound using the etched protective layer as a mask; And forming a pattern of a hexagonal nanonet structure using a transition metal etchant in the etched transition metal chalcogen compound. It relates to a method of manufacturing a thin film of a nanonet transition metal chalcogen compound.