METHOD OF PRODUCING GERMANENE-BASED EUGE₂ AND SRGE₂ MATERIALS WITH HIGH MOBILITY OF CHARGE CARRIERS

摘要

FIELD: technological processes.;SUBSTANCE: invention relates to production of materials based on germanene EuGe₂ and SrGe₂ with high mobility of charge carriers, which can be used in making nanoelectronic devices. Atomic flow of europium or strontium with pressure (0.1÷100)⋅10^-8 Torr is deposited on pre-cleaned surface of Ge(111) substrate, heated to T_s=250÷510 °C. Film with thickness of more than 100 nm is formed with subsequent optional annealing of obtained films at temperature of not more than T_s=530 °C.;EFFECT: provides stabilization of germanene and formation of films of crystalline modification hP3.;1 cl, 7 dwg, 4 ex