首页> 外国专利> METHOD OF MAKING A HETEROSTRUCTURE BASED ON AN ARRAY OF NANORODS OF ZINC OXIDE WITH A THIN SOLID SHELL OF TIN SULPHIDE

METHOD OF MAKING A HETEROSTRUCTURE BASED ON AN ARRAY OF NANORODS OF ZINC OXIDE WITH A THIN SOLID SHELL OF TIN SULPHIDE

机译:基于硫化锌薄壳型氧化锌纳米晶阵列的异质结构制备方法

摘要

FIELD: optoelectronic devices.;SUBSTANCE: invention relates to nanotechnology of multispectral photodetectors (MSPD), as well as film photoelectric converters (PEC) based on p-n-junction heterostructures, containing massif of nanostructure niobium oxide of n-type conductivity (n-(MHC-ZnO)) with extra-thin semiconductor cladding (ETSC) of p-type conductivity. Technical result is achieved due to successive cathodic pulse electrochemical deposition from aqueous electrolytes at temperatures not higher than 65 °C and duration of not more than 60 minutes first, on a high-conductivity transparent for NUR substrate n-(MHC-ZnO) with intergrowing HC-ZnO bases, having an average length of about 0.65 mcm and an average diameter of non-adherent areas near the upper ends of about 0.30 mcm, and then a solid ETSC from 100 nm thick p-SnS; further deposition by successive adsorption and ion reaction of p-CuSCN layer with thickness of 600 nm; subsequent thermo-vacuum metallization with thin-film copper through a shadow copper mask of p-CuSCN layer and high-conducting substrate surface beyond n-(MHC-ZnO), forming high-conductive epoxy contact layers over metallized areas, bonding flexible copper wire leads with epoxy high-conductive adhesive to contact layers and annealing said structure in air at 250 °C for 300 seconds. Implementation of such method of making the claimed heterostructure as a test photoconverter provides reliable reproducibility of its operation in irradiation mode AM1.5G at 25 °C with record efficiency for such photoconverters of efficiency of η6.7 %.;EFFECT: technical result is high efficiency of the disclosed heterostructure in the composition of the MSPD and the photoconverter when exposed to near ultraviolet radiation (NUR) and light from the visible spectrum, simple technology of making such a heterostructure, low power consumption and high environmental friendliness, avoiding the need to use expensive metals: platinum, gold, silver, palladium, indium, as well as graphene in elements of the design of the MSPD and photoconverter based on the considered heterostructure.;10 cl, 12 dwg
机译:技术领域本发明涉及多光谱光电探测器(MSPD)的纳米技术以及基于pn结异质结构的薄膜光电转换器(PEC),该薄膜光电转换器包含n型电导率(n-( MHC-ZnO),具有p型导电性的超薄半导体覆层(ETSC)。由于在连续生长的NUR衬底n-(MHC-ZnO)高导电性透明体上,在不高于65°C的温度下,连续时间不超过60分钟的情况下,从水性电解质中连续进行阴极脉冲电化学沉积,从而获得了技术成果HC-ZnO碱,平均长度约为0.65mcm,上端附近的非粘附区域的平均直径约为0.30mcm,然后是厚度为100nm的p-SnS的固态ETSC;通过连续吸附和离子反应对厚度为600nm的p-CuSCN层进行进一步沉积;随后通过p-CuSCN层的阴影铜掩膜和n-(MHC-ZnO)以外的高导电衬底表面用薄膜铜进行热真空金属化,在金属化区域上形成高导电环氧接触层,并粘结柔性铜线用环氧高导电粘合剂将其引线连接到接触层,并在250°C的空气中将所述结构退火300秒。这种制造要求保护的异质结构作为测试光电转换器的方法的实施提供了其在25°C的辐射模式AM1.5G下的可靠操作再现性,并且这种光电转换器的效率达到了η6.7%的创纪录效率;效果:技术成果很高当暴露于近紫外辐射(NUR)和可见光谱的光中时,所公开的异质结构在MSPD和光电转换器组成中的效率,制造此类异质结构的简单技术,低功耗和高环境友好性,避免了对在考虑到的异质结构的MSPD和光敏转换器的设计元素中使用昂贵的金属:铂,金,银,钯,铟和石墨烯; 10 cl,12 dwg

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