首页> 外文期刊>Journal of Electronic Materials >Bicolor Light-Emitting Diode Based on Zinc Oxide Nanorod Arrays and Poly(2-methoxy,5-octoxy)-1,4-phenylenevinylene
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Bicolor Light-Emitting Diode Based on Zinc Oxide Nanorod Arrays and Poly(2-methoxy,5-octoxy)-1,4-phenylenevinylene

机译:基于氧化锌纳米棒阵列和聚(2-甲氧基,5-辛氧基)-1,4-亚苯基亚乙烯基的双色发光二极管

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摘要

The current study reports a novel inorganic/organic light-emitting diode (LED), consisting of zinc oxide (ZnO) nanorod arrays and poly(2-methoxy, 5-octoxy)-1,4-phenylenevinylene (MOPPV). ZnO nanorod arrays passivated using polyacrylamide (PAM) with 70 nm diameter were successfully prepared by a simple polymer-assisted chemical method. Enhancement of the ZnO defect emission is caused by PAM passivation, as observed in photoluminescence spectra. Infrared absorption spectra reveal that PAM is chemically or physically adsorbed on the surfaces of ZnO nanorod arrays. The electroluminescence (EL) spectrum shows bluish light at 406 nm from ZnO transition emission, and light emission with center at 600 nm from exciton emission in MOPPV. The potential EL mechanism is electron transition to zinc vacancy in PAM/ZnO nanorod arrays, and exciton radiation luminescence in MOPPV film. This novel PAM/ZnO-MOPPV device may be helpful to promote development of multicolor LEDs.
机译:本研究报告了一种新型的无机/有机发光二极管(LED),该二极管由氧化锌(ZnO)纳米棒阵列和聚(2-甲氧基,5-辛氧基)-1,4-亚苯基亚乙烯基(MOPPV)组成。通过简单的聚合物辅助化学方法成功制备了使用直径为70 nm的聚丙烯酰胺(PAM)钝化的ZnO纳米棒阵列。如在光致发光光谱中所观察到的,ZnO缺陷发射的增强是由PAM钝化引起的。红外吸收光谱表明,PAM被化学或物理吸附在ZnO纳米棒阵列的表面上。电致发光(EL)光谱显示MOPPV中ZnO跃迁发射在406 nm发出的蓝光,而激子发射在600 nm发出的中心光。潜在的EL机制是PAM / ZnO纳米棒阵列中的电子跃迁到锌空位,以及MOPPV膜中的激子辐射发光。这种新颖的PAM / ZnO-MOPPV器件可能有助于促进多色LED的发展。

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