Power semiconductor device with a silicate glass structure, a semiconductor device with an implanted silicate glass structure, and a method for manufacturing the same

摘要

A power semiconductor device suitable for conducting currents greater than 1A and comprising: a semiconductor body (105) having a first surface (110), a continuous, contiguous silicate glass structure (115) over the first surface (110), a first part (115a) of the continuous, coherent glass structure (115) over an active region (105a) of the semiconductor body (105) has a first composition of dopants, which is derived from a second composition of dopants in a second part (115b) of the continuous, coherent glass structure (115) over a Edge termination region (105b) of the semiconductor body (105) deviates outside of the active region (105a); and wherein the first part (115a) consists of a layer or a vertically contiguous stack of layers; and the second part (115b) consists of a layer or a vertically contiguous stack of layers.