Ion beam processing method and ion beam processing device

摘要

An ion beam processing method of processing a substrate attached to a substrate holder using an ion beam extracted from a plasma source through a grid, the method comprising, when performing ion beam etching on the substrate inclined to the grid is arranged while rotating the substrate in an in-plane direction thereof, ion beam processing is carried out so that an etching size of an ion beam incident from an expanding direction of a pattern trench formed on the substrate is made larger is called an etching size of an ion beam incident from another direction.