METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR USING CARBON NANO TUBES AND SIELD EFFECT TRANSISTOR

摘要

In a method of forming a gate all around field effect transistor (GAA-FET), a bottom support layer is formed over a substrate and a first group of carbon nanotubes (CNTs) is placed over the bottom support layer. A first support layer is formed over the first group of CNTs and the lower support layer so that the first group of CNTs is embedded in the first support layer. A second group of carbon nanotubes (CNTs) is placed over the first support layer. A second support layer is formed over the second group of CNTs and the first support layer so that the second group of CNTs is embedded in the second support layer. A fin structure is formed by structuring at least the first support layer and the second support layer.