METHOD FOR PREDICTING EDUCATIONAL BEHAVIOR OF THERMAL DONATORS IN A SILICON WAFER, METHOD FOR ASSESSING A SILICON WAFER AND METHOD FOR PRODUCING A SILICON WAFER

摘要

A method for accurately predicting the formation behavior of thermal donors in a silicon wafer, a method for evaluating a silicon wafer using the prediction method, and a method for producing a silicon wafer using the evaluation method are provided. The method for predicting the formation behavior of thermal donors includes the following: a first step of establishing an initial oxygen concentration condition before performing heat treatment on the silicon wafer for reaction rate equations based on both a bond dissociation model of oxygen clusters associated with the diffusion of interstitial oxygen than also a binding model of oxygen clusters associated with the diffusion of oxygen dimers; a second step of calculating the formation rate of oxygen clusters formed by the heat treatment using the reaction rate equations; and a third step of calculating the formation rate of thermal donors formed by the heat treatment based on the formation rate of the oxygen clusters.