Semiconductor device including fuse cell structure

摘要

A structure includes a word line, a bit line and an anti-fuse cell. The anti-fuse cell comprises a reading device, a programming device and a dummy device. The reading device includes a first gate coupled to the first word line, a first source / drain region coupled to the bit line, and a second source / drain region. The first source / drain region and the second source / drain region are on opposite sides of the first gate. The programming device includes a second gate, a third source / drain region coupled to the second source / drain region, and a fourth source / drain region. The third source / drain region and the fourth source / drain region are on opposite sides of the second gate. The dummy device includes a third gate, a fifth source / drain region coupled to the fourth source / drain region, and a sixth source / drain region. The fifth source / drain region and the sixth source / drain region are on opposite sides of the third gate.