Semiconductor component and arrangement for contacting the semiconductor component during anodic bonding of a glass substrate with contact bushings to a silicon substrate

摘要

Concepts, including arrangements, are proposed, according to which a connection is made possible by anodic bonding between a glass substrate 200, which has contact bushings 210, and a substrate 100 comprising semiconductors. For this purpose, a cover of the contact bushings 210 is provided in the anodic bonding method in such a way that process conditions are created which achieve a reliable and robust connection of the substrates. High resistance can be produced in the area of the contact bushings 210. The arrangement for contacting the semiconductor component with the silicon substrate (100) has at least one contact bushing 210 which runs through the passivation in order to contact a region of the first substrate 100.