Photolithography apparatus and photolithography method for exposing a photoresist of a semiconductor substrate to an exposure pattern

摘要

The invention relates to a photolithography device (10) and a photolithography method for exposing a photoresist (12) of a semiconductor substrate (14) with an exposure pattern. The photolithography device (10) comprises a carrier medium (16) which is designed to transmit light coupled in as a light guide by means of internal reflection, as well as an in-coupling area (20) and an outcoupling area (22), which are arranged in different sections of the carrier medium. The photolithography device (10) further comprises an illumination device (28) which can emit light with a predetermined wavelength onto the coupling-in area (20), the coupling-in area (20) having a coupling-in deflection structure (24) which is designed to emit light with the predetermined The wavelength that falls from the lighting device (28) onto the coupling-in deflection structure (24) is to be coupled into the carrier medium (16) in the direction of the coupling-out region, the coupling-out region (22) having a coupling-out deflection structure (26) which is designed and arranged for this purpose Light with the predetermined wavelength that falls on the decoupling deflection structure (26) is decoupled from the carrier medium (16) onto the photoresist (12) of the semiconductor substrate.