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Inorganic polymer photoresist for direct ceramic patterning by photolithography

机译:用于通过光刻法直接陶瓷图案化的无机聚合物光刻胶

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摘要

A novel negative, inorganic polymer photoresist was demonstrated to be suitable for simple and direct fabrication of tribological SiCN-based ceramic microstructures via UV photolithography and subsequent pyrolysis at 800 ℃. Photolithography has become the mainstay for small feature patterning, in which the chemical structure of a thin photoresist is modified by radiation. Following the incredible advances in photolithography, various organic photoresists are being used in a wide range of applications such as semiconductor processing, optical circuits, microfluidic devices, and microelectromechanical systems (MEMS).
机译:新型负性无机聚合物光致抗蚀剂经紫外光刻和随后在800℃下热解,适用于简单,直接地制造摩擦学基于SiCN的陶瓷微结构。光刻法已成为小特征图案形成的主要手段,其中薄光致抗蚀剂的化学结构通过辐射进行修饰。继光刻技术取得令人难以置信的进步之后,各种有机光致抗蚀剂正在广泛的应用中使用,例如半导体加工,光学电路,微流体设备和微机电系统(MEMS)。

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