Devices and techniques for rapid programming and reading of memory cells. A group of word lines, which have a selected word line and one or more adjacent word lines, is driven with a common voltage signal during program and read processes. The word lines can be permanently connected to one another or connected by a switch. In another approach, the word lines are controlled separately by common voltage signals. In one set of blocks, one block of memory cells can be provided with connected word lines in order to provide a relatively high access speed, while another block of memory cells has separate word lines in order to provide a higher storage density. In another aspect, the memory cells of a word line are divided into sections, and a section closest to a row decoder is reserved for a high access speed with a low storage density.
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