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NEW CORELESS ARCHITECTURE AND PROCESSING STRATEGY FOR EMIB-BASED SUBSTRATES WITH HIGH ACCURACY AND HIGH DENSITY
NEW CORELESS ARCHITECTURE AND PROCESSING STRATEGY FOR EMIB-BASED SUBSTRATES WITH HIGH ACCURACY AND HIGH DENSITY
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机译:高精确度和高密度的基于EMIB的基体的新的协调架构和处理策略
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摘要
Embodiments include semiconductor packages and a method for forming the semiconductor packages. A semiconductor package includes a plurality of conductive layers over a package substrate. The conductive layers include a first conductive layer and first level interconnects (FLIs) in the package substrate. The semiconductor package also includes a solder resist surrounding the FLIs, wherein the solder resist has a top surface that is substantially coplanar with top surfaces of the FLIs, a bridge that is directly coupled to the first conductive layer with solder bumps, the first conductive layer is coupled to the FLIs, and a dielectric over the conductive layers, bridge, and solder resist of the package substrate. The bridge can be an embedded multi-die connection bridge (EMIB). The first conductive layer can include first conductive pads and second conductive pads. The FLIs can include first conductive vias, second conductive vias, diffusion layers, and third conductive pads.
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