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CORELESS ARCHITECTURE AND PROCESSING STRATEGY FOR EMIB-BASED SUBSTRATES WITH HIGH ACCURACY AND HIGH DENSITY
CORELESS ARCHITECTURE AND PROCESSING STRATEGY FOR EMIB-BASED SUBSTRATES WITH HIGH ACCURACY AND HIGH DENSITY
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机译:高精确度和高密度的基于EMIB的基体的关联体系结构和处理策略
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摘要
Embodiments include semiconductor packages and method of forming the semiconductor packages. A semiconductor package includes a plurality of conductive layers over a package substrate. The conductive layers include a first conductive layer and first-level interconnects (FLIs) in the package substrate. The semiconductor package also includes a solder resist that surrounds the FLIs, where the solder resist has a top surface that is substantially coplanar to top surfaces of the FLIs, a bridge coupled directly to the first conductive layer with solder balls, where the first conductive layer is coupled to the FLIs, and a dielectric over the conductive layers, the bridge, and the solder resist of the package substrate. The bridge may be an embedded multi-die interconnect bridge (EMIB). The first conductive layer may include first conductive pads and second conductive pads. The FLIs may include first conductive vias, second conductive vias, diffusion layers, and third conductive pads.
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