METHOD FOR MANUFACTURING A HETEROSTRUCTURE COMPRISING ELEMENTARY PHOTONIC STRUCTURES OF III-V MATERIAL ON THE SURFACE OF A SILICON-BASED SUBSTRATE

摘要

The subject of the invention is a method of manufacturing a heterostructure comprising at least one elementary active photonic structure of III-V material on the surface of a silicon-based substrate comprising: - the production of a first pattern having at at least a first opening (Oi1) and a first epitaxy operation of at least one III-V material; - the production of a second pattern with at least a second opening (Oi2) and a second epitaxy operation so as to produce the active photonic elementary structure having an external face; - An operation for transferring and assembling the active photonic elementary structure via its external face, on an interface (300), said interface being produced on the surface of a second silicon-based substrate (301).