METHOD OF MANUFACTURING AN OPTOELECTRONIC DEVICE FOR EMISSION OF INFRARED LIGHT INCLUDING AN ACTIVE LAYER BASED ON GESN

摘要

The invention relates to a method of manufacturing an optoelectronic device (1) for emitting infrared radiation, comprising the following steps: i) producing a first stack (10) comprising: o a light source (11 ), ○ a first bonding sublayer (17) made of a metallic material of interest chosen from among gold, titanium and copper, ii) production of a second stack (20) comprising: ○ an active layer (23) based on GeSn, obtained by epitaxy at an epitaxy temperature (Tepi), ○ a second bonding sublayer (25) made of said metallic material of interest, iii) determination of a temperature of assembly (Tc) substantially between an ambient temperature (Tamb) and said epitaxy temperature (Tepi), such that a direct bonding surface energy of said metallic material of interest is greater than or equal to 0.5J / m2; iv) assembly by direct bonding, at said assembly temperature (Tc), of said stacks (10, 20).