Quantum confined stark effect electroabsorption modulator on a soi platform

摘要

The invention relates to an electro-absorption modulator (EAM) comprising a Silicon on Insulator (SOI) waveguide coupled to an active region, F, via a coupler. The active region comprises a multiple quantum well (MQW) region (such as Ge/SiGe multiple quantum well region) and the coupler comprises a) a transit waveguide coupling region, A, b) a buffer waveguide coupling region, B and c) a taper region, C, D, E. The transit waveguide coupling region couples light between the SOI waveguide and the buffer waveguide coupling region whilst the buffer waveguide coupling region couples light between the transit waveguide region and the active region via the taper region. The EAM can be a Quantum Confined Stark Effect (QCSE) modulator. The EAM is designed to operate at 1.3µm wavelength (i.e. O band) and be CMOS compatible operating on a SOI platform.