Semiconductor plasma processing apparatus with wafer edge plasma sheath adjusting function

摘要

Problem to be solved: to provide a method and apparatus for controlling the shape of a plasma sheath formed across a substrate such as a semiconductor wafer during plasma processing to improve the uniformity of etch rate over the entire surface of the substrate.In an apparatus for controlling the shape of the plasma sheath 248, the method includes adjustment of one or more plasma processing variables and \/ or adjustment of the construction of the process kit 202 hardware.The process kit 202 supports the proximity and \/ or substrate to the substrate during processing.Further, the number of expendable parts in the process kit 202 is replaced by a few.On the other hand, the remaining components of process kit 202 are reused for a long period without breathing through the processing chamber.The replacement of the consumable parts is performed by automatically replacing the used parts without ventilation of the processing chamber.Fig.2a