Advanced Plasma Processing: Etching, Deposition, and Wafer Bonding Techniques for Semiconductor Applications

摘要

Plasma processing techniques are one of the cornerstones of modern semiconductorudfabrication. Low pressure plasmas in particular can achieve high radical density, highudselectivity, and anisotropic etch profiles at low temperatures and mild voltages. This gentleudprocessing environment prevents unwanted diffusion and degradation of materials due toudheat and lattice damage from ion bombardment. Plasma treatments have a minimal effectudon existing wafer structure, which is a key requirement for large scale integration schemesudsuch as CMOS. In addition, recent progress in plasma-assisted wafer bonding hasuddemonstrated low temperature, low pressure recipes utilizing O_2 plasma surface treatmentudfor joining dissimilar semiconductor materials, such as silicon (Si) and indium phosphideud(InP) (Fang et al., 2006).