3D inverse flat NAND memory device including partially discrete charge storage elements and methods of manufacturing same

摘要

The three-dimensional memory device includes alternating stacks of electrically conductive strips and insulating strips positioned on the substrate and laterally spaced from each other by line trenches. The line trenches extend laterally along the first horizontal direction and are spaced apart along the second horizontal direction. Each line trench filling structure is provided with lateral undulating dielectric rails having a lateral undulating width along a second horizontal direction and extending along a first horizontal direction, and neck regions of the lateral undulating dielectric rails. And a row of located memory stack structures. Each memory stack structure is a vertical semiconductor channel, a blocking dielectric contacting the outer sidewall of the vertical semiconductor channel, and a contacting outer sidewall of the blocking dielectric, extending continuously vertically through each level of electrically conductive strips, and vertically And a charge storage layer having an undulating lateral thickness.