PROCÉDÉ DE FORMATION D'UN TRANSISTOR BIPOLAIRE D'HÉTÉROJONCTION DU GROUPE III SUR UN SUBSTRAT DU GROUPE IV ET DISPOSITIF DE TRANSISTOR BIPOLAIRE D'HÉTÉROJONCTION CORRESPONDANT

摘要

According to an aspect of the present inventive concept there is provided a method for forming a heterojunction bipolar transistor, the method comprising:forming a doped region in a group IV semiconductor layer of a substrate,forming an epitaxially grown III-V semiconductor body on a surface portion of the doped region, the body extending from the surface portion and protruding vertically above the doped region,wherein the doped region and the body forms a first sub-collector part and a second sub-collector part, respectively, andforming an epitaxially grown III-V semiconductor layer stack on the body, the layer stack comprising a collector, a base and an emitter. There is further provided a heterojunction bipolar transistor device.