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New Constraints and Prospects for sub-GeV Dark Matter Scattering off Electrons in Xenon

机译:亚GeV暗物质散射的新约束和前景   氙气中的电子

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摘要

We study in detail sub-GeV dark matter scattering off electrons in xenon,including the expected electron recoil spectra and annual modulation spectra.We derive improved constraints using low-energy XENON10 and XENON100ionization-only data. For XENON10, in addition to including electron-recoildata corresponding to about $1-3$ electrons, we include for the first timeevents with $\gtrsim 4$ electrons. Assuming the scattering is momentumindependent, this strengthens a previous cross-section bound by almost an orderof magnitude for dark matter masses above 50 MeV. The available XENON100 datacorresponds to events with $\gtrsim 4$ electrons, and leads to a constraintthat is comparable to the XENON10 bound above 50 MeV. We demonstrate that asearch for an annual modulation signal in upcoming xenon experiments (XENON1T,XENONnT, LZ) could substantially improve the above bounds even in the presenceof large backgrounds. We also emphasize that in simple benchmark models ofsub-GeV dark matter, the dark matter-electron scattering rate can be as high asone event every ten (two) seconds in the XENON1T (XENONnT or LZ) experiments,without being in conflict with any other known experimental bounds. While thereare several sources of backgrounds that can produce single- or few-electronevents, a large event rate can be consistent with a dark matter signal andshould not be simply written off as purely a detector curiosity. This factmotivates a detailed analysis of the ionization-only ("S2-only") data, takinginto account the expected annual modulation spectrum of the signal rate, aswell as the DM-induced electron-recoil spectra, which are another powerfuldiscriminant between signal and background.
机译:我们详细研究了氙气中从电子中散射出来的亚GeV暗物质,包括预期的电子反冲谱和年度调制谱。我们使用低能XENON10和XENON100仅电离数据推导了改进的约束条件。对于XENON10,除了包括对应于约1-3 $电子的电子反冲数据外,我们还首次包括了具有4个电子的事件。假设散射与动量无关,则对于50 MeV以上的暗物质质量,这将增强先前的横截面,其边界几乎接近一个数量级。可用的XENON100数据与具有$ \ gtrsim 4 $个电子的事件相对应,并导致一个约束,该约束类似于在​​50 MeV以上受约束的XENON10。我们证明,在即将来临的氙气实验(XENON1T,XENONnT,LZ)中研究年度调制信号即使在大背景下也可以大大改善上述界限。我们还强调,在亚GeV暗物质的简单基准模型中,在XENON1T(XENONnT或LZ)实验中,暗物质-电子散射速率可以高达每十(两)秒一个事件,而不会与其他任何冲突已知的实验范围。尽管有几种背景会产生单次电子事件或几次电子事件,但是大事件发生率可能与暗物质信号一致,因此不应仅仅因为探测器的好奇心就被简单地注销。这一事实促使人们对仅电离(“仅S2”)数据进行详细分析,并考虑了信号速率的预期年度调制频谱以及由DM引起的电子反冲频谱,这是信号与背景之间的另一个有力区别。

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