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Phonons in potassium doped graphene: the effects of electron-phonon interactions, dimensionality and ad-atom ordering

机译:钾掺杂石墨烯中的声子:电子 - 声子的影响   相互作用,维度和广告 - 原子排序

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摘要

Graphene phonons are measured as a function of electron doping via theaddition of potassium adatoms. In the low doping regime, the in-plane carbonG-peak hardens and narrows with increasing doping, analogous to the trend seenin graphene doped via the field-effect. At high dopings, beyond thoseaccessible by the field-effect, the G-peak strongly softens and broadens. Thisis interpreted as a dynamic, non-adiabatic renormalization of the phononself-energy. At dopings between the light and heavily doped regimes, we find arobust inhomogeneous phase where the potassium coverage is segregated intoregions of high and low density. The phonon energies, linewidths and tunabilityare remarkably similar for 1-4 layer graphene, but significantly different todoped bulk graphite.
机译:通过添加钾原子来测量石墨烯声子与电子掺杂的关系。在低掺杂状态下,面内碳G峰会随着掺杂的增加而变硬和变窄,类似于通过场效应掺杂的石墨烯中的趋势。在高掺杂时,G峰会大大软化和扩展,超出了场效应所能达到的范围。这被解释为声子自能量的动态,非绝热重整化。在轻掺杂和重掺杂体系之间的掺杂中,我们发现稳健的不均匀相,其中钾的覆盖范围被分为高密度区域和低密度区域。 1-4层石墨烯的声子能量,线宽和可调谐性非常相似,但掺杂的大块石墨却有显着不同。

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