The e2v CCD236 is a swept charge device (SCD) designed as a soft X-ray detector for spectroscopy in the range 0.8 keV to 10 keV [1]. It benefits from improvements in design over the previous generation of SCD (the e2v CCD54) [2] to allow for increased detector area, a reduction in split X-ray events and improvements to radiation hardness [3]. To enable the suppression of surface dark current the device is clocked continuously, therefore there is no positional information making responsivity variations difficult to measure. This paper describes investigated techniques to achieve a responsivity map across the device using masking and XRF, and spot illumination from an organic light-emitting diode (OLED). The results of this technique should allow a deeper understanding of the device sensitivity and allow better data interpretation in SCD applications.
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