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Responsivity mapping techniques for the non-positional CCD: the swept charge device CCD236

机译:用于非定位CCD的响应度映射技术:扫频充电装置CCD236

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摘要

The e2v CCD236 is a swept charge device (SCD) designed as a soft X-ray detector for spectroscopy in the range 0.8 keV to 10 keV [1]. It benefits from improvements in design over the previous generation of SCD (the e2v CCD54) [2] to allow for increased detector area, a reduction in split X-ray events and improvements to radiation hardness [3]. To enable the suppression of surface dark current the device is clocked continuously, therefore there is no positional information making responsivity variations difficult to measure. This paper describes investigated techniques to achieve a responsivity map across the device using masking and XRF, and spot illumination from an organic light-emitting diode (OLED). The results of this technique should allow a deeper understanding of the device sensitivity and allow better data interpretation in SCD applications.
机译:e2v CCD236是一种扫频充电设备(SCD),被设计为0.8 keV至10 keV范围内的软X射线光谱检测器[1]。它比上一代SCD(e2v CCD54)的设计有所改进[2],从而可以增加探测器面积,减少X射线分裂事件并提高辐射硬度[3]。为了抑制表面暗电流,设备需要连续计时,因此没有位置信息,很难测量响应度变化。本文介绍了已研究的技术,这些技术可通过使用掩膜和XRF以及来自有机发光二极管(OLED)的点照明来实现整个设备的响应度图。该技术的结果应该可以使人们对器件的灵敏度有更深入的了解,并可以在SCD应用中更好地解释数据。

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