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Characterization of nano-scale protective oxide films: application on metal chemical mechanical planarization

机译:纳米级保护氧化膜的表征:金属化学机械平坦化的应用

摘要

This study focuses on the characterization of nano-scale metal oxide films for chemical mechanical planarization (CMP) applications. The protective nature of the self-grown metal oxide layers in the CMP slurry environment enable topographic selectivity required for metallization of interconnects. Tungsten was selected as the model metal film to study the formation and characteristics of the metal oxide nano-layers since tungsten CMP is very well-established in conventional semiconductor manufacturing. The tungsten oxide nano-films were characterized for thickness, density and surface topography in addition to evaluation of their protective nature by calculation of the Pilling-Bedworth (P-B) ratios. It was observed that in addition to controlling the self-protective characteristics, the oxidizer concentration also affects the surface structure of the metal oxide films resulting in significant changes in the CMP process performance in terms of material removal rates and surface finish with a sweet-spot detected at 0.075 M H2O2 concentration.
机译:这项研究的重点是用于化学机械平面化(CMP)应用的纳米级金属氧化物膜的表征。自生长金属氧化物层在CMP浆料环境中的保护性使互连金属化所需的形貌选择性得以实现。由于钨CMP在常规半导体制造中已经非常成熟,因此选择钨作为模型金属膜来研究金属氧化物纳米层的形成和特性。除了通过计算皮林-贝德沃思(P-B)比来评估其保护性之外,还表征了氧化钨纳米膜的厚度,密度和表面形貌。观察到,除控制自我保护特性外,氧化剂的浓度还影响金属氧化物膜的表面结构,从而导致CMP工艺性能的显着变化,包括材料去除率和具有甜点的表面光洁度。在0.075 M H2O2浓度下检测到。

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