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Synthetic ferrimagnet nanowires with very low critical current density for coupled domain wall motion

机译:合成ferrimagnet纳米线具有非常低的临界电流密度,用于耦合畴壁运动

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摘要

Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of energy-efficient devices has been hampered by the high current densities needed to initiate domain wall motion. We show here that a remarkable reduction in the critical current density can be achieved for in-plane magnetised coupled domain walls in CoFe/Ru/CoFe synthetic ferrimagnet tracks. The antiferromagnetic exchange coupling between the layers leads to simple Néel wall structures, imaged using photoemission electron and Lorentz transmission electron microscopy, with a width of only ~100 nm. The measured critical current density to set these walls in motion, detected using magnetotransport measurements, is 1.0 × 10(11) Am(-2), almost an order of magnitude lower than in a ferromagnetically coupled control sample. Theoretical modelling indicates that this is due to nonadiabatic driving of anisotropically coupled walls, a mechanism that can be used to design efficient domain-wall devices.
机译:铁磁纳米线中的畴壁是未来技术(例如赛道存储器)的潜在构建基块,其中使用自旋极化电流传输在畴壁中编码的数据。但是,启动畴壁运动所需的高电流密度阻碍了高能效设备的开发。我们在这里表明,对于在CoFe / Ru / CoFe合成铁氧体磁道中的面内磁化耦合畴壁,可以实现临界电流密度的显着降低。层之间的反铁磁交换耦合导致简单的Néel壁结构,使用光发射电子和Lorentz透射电子显微镜成像,宽度仅为〜100 nm。使用磁传输测量检测到的使这些壁运动的临界电流密度为1.0×10(11)Am(-2),几乎比铁磁耦合控制样品低一个数量级。理论模型表明,这是由于各向异性耦合壁的非绝热驱动所致,该机制可用于设计有效的畴壁设备。

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