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About MoO3 as buffer layer in organic optoelectronic devices, Technology Letters

机译:关于moO3作为有机光电器件中的缓冲层,技术快报

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摘要

MoO3 is well known as efficient anode buffer layer in optoelectronic devices. Actually, MoO3 can be easily deposited under vacuum, by sublimation for instance, and also by wet process. So it is known from a long time that the films deposited by sublimation are amorphous and slightly oxygen deficient, which induces a light blue coloration due to oxygen vacancies. These oxygen vacancies imply the presence of Mo4+ and Mo5+ in the films. The presence of oxygen vacancies increases the conductivity from 10-12 to 10-6 (Ωcm)-1, while stoichiometric films are insulating and MoO2 has a metallic like behaviour with s = 2 102 (Ωcm)-1. About the efficiency of MoO3 as buffer layer, recent studies questioned the MoO3 band structure generally admitted. Under ultra high vacuum, the measured ionisation energy, IE, and electron affinity are found to be 9.7 eV and 6.7 eV respectively, while the films are strongly n-type. Its means that the very large IE energy of the MoO3 excludes any hole transport via the valence band, while the energy alignment between the band conduction minimum, CB, of MoO3 and the Highest Occupied Molecular Orbital (HOMO) of the organic material is favourable for electron transfer between the two materials. In the case of organic photovoltaic cells, the photogenerated hole recombines with an electron at the interface between MoO3 and the organic layer. Indeed, the work function, WF, of the molybdenum oxide films depends strongly of its composition, WF decreases when the oxygen deficiency increases, and on the exposition, or not, of its surface to air contamination. This makes that WF varies from 6.9 eV for a layer studied under ultra high vacuum to 5.2 eV for a layer exposed to the air a few hours. However, since the initial value of WF is very high, MoO3 remains effective if the Highest Occupied Molecular Orbital of the organic material is lower than 6 eV. The band structure of MoO3 and the large possible variations of WF make that, for specific conditions of preparation and conditioning, MoO3 can also be used as CBL.
机译:MoO 3是众所周知的光电器件中的有效阳极缓冲层。实际上,MoO3可以很容易地在真空下沉积,例如通过升华,也可以通过湿法沉积。因此,长期以来就知道通过升华沉积的膜是无定形的并且略微缺氧,由于氧空位而引起浅蓝色。这些氧空位表明膜中存在Mo4 +和Mo5 +。氧空位的存在将电导率从10-12增加到10-6(Ωcm)-1,而化学计量膜是绝缘的,MoO2具有类似金属的行为,s = 2 102(Ωcm)-1。关于MoO3作为缓冲层的效率,最近的研究质疑了通常公认的MoO3能带结构。在超高真空下,测得的电离能,IE和电子亲和力分别为9.7 eV和6.7 eV,而薄膜为强n型。这意味着MoO3的非常大的IE能量排除了通过价带进行的任何空穴传输,而MoO3的带导最小CB和有机材料的最高占据分子轨道(HOMO)之间的能量对准有利于两种材料之间的电子转移。在有机光伏电池的情况下,光生空穴在MoO3和有机层之间的界面处与电子复合。确实,氧化钼膜的功函数WF很大程度上取决于其组成,当氧缺乏增加时WF降低,并且取决于表面是否暴露于空气污染。这使得WF从在超高真空下研究的一层的6.9 eV变化到暴露在空气中数小时的一层的5.2 eV。但是,由于WF的初始值非常高,因此,如果有机材料的最高占有分子轨道低于6 eV,MoO3仍然有效。 MoO3的能带结构和WF的较大可能变化使得对于特定的制备和调节条件,MoO3也可用作CBL。

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