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Increased Control over Gold Colloid Adsorption on Substrates for Colloid Displacement Lithography

机译:胶体置换光刻对基底上金胶体吸附的控制增加

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摘要

Colloid displacement lithography is proving to be very effective in the designing of nanometer scale electronic devices. Precise control of the structure of matter at the nanometer scale has brought a revolutionary change in science and technology. The use of these nanometer scale devices ranges from the diagnosis of various diseases to cell repair to ultra strong materials. This research focused on optimizing the conditions for gold colloid particle adsorption for colloid displacement lithography, an expansion on gold colloid particle manipulation techniques using a scanned probe microscope. The system consists of a scrupulously cleaned glass surface that is coated with poly(diallyldimethylammonium chloride) (PDDA) and then with 5- or 10- nm gold colloid particles. The optimum conditions include the use of very low molecular weight PDDA (Avg MW u3c100,000 g/mol) or low molecular weight PDDA (Avg MW 100,000-200,000 g/mol) with an exposure time to the glass substrate of 120 to 150 minutes. This is then followed by a 24-hour exposure to the colloid solution. An atomic force microscope (AFM) is used to pattern the thus prepared colloid coated slides. In this work a variety of salts are used as potential blocking agents to prevent or modify the colloid adsorption. These include potassium iodide, potassium bromide, potassium chloride, sodium fluoride, sodiumsulfate, potassium hydrogen phosphate, potassium hydrogen phthalate, and sodium citrate.In summary, the following were found as a result of this work: The optimum conditions that lead to efficient patterning are: Low molecular weight PDDA with a coating time of 120 to 150 minutes.Exposure to 5-nm gold colloid for 24 hoursThe most interesting potential blocking agents are the phosphate, sulfate and citrate salts, as they show some potential for modifying the adsorption of the gold colloids on the PDDA.The dispersion of the colloid particles on the PDDA does not change when using the potential blocking agents compared to direct adsorption on the unmodified PDDA layer.The use of the potential blocking agents reduces the force required to pattern by a factor of 100 to 300.
机译:胶体位移光刻被证明在纳米级电子设备的设计中非常有效。纳米级物质结构的精确控制带来了科学技术的革命性变化。这些纳米级设备的使用范围从诊断各种疾病到细胞修复再到超强材料。这项研究的重点是优化胶体置换光刻的金胶体颗粒吸附条件,这是对使用扫描探针显微镜的金胶体颗粒处理技术的扩展。该系统由仔细清洁的玻璃表面组成,该表面先涂有聚二烯丙基二甲基氯化铵(PDDA),然后涂有5或10 nm金胶体颗粒。最佳条件包括使用极低分子量的PDDA(平均分子量MW 100,000 g / mol)或低分子量PDDA(平均分子量100,000-200,000 g / mol),其对玻璃基板的暴露时间为120至150分钟。然后将其暴露于胶体溶液中24小时。使用原子力显微镜(AFM)对由此制备的胶体涂覆的载玻片进行图案化。在这项工作中,各种盐被用作潜在的封闭剂,以防止或改变胶体的吸附。这些包括碘化钾,溴化钾,氯化钾,氟化钠,硫酸钠,磷酸氢钾,邻苯二甲酸氢钾和柠檬酸钠。总而言之,通过这项工作发现了以下内容:导致有效构图的最佳条件分别是:低分子量PDDA,涂覆时间为120至150分钟。暴露于5nm金胶体中24小时最有趣的潜在阻断剂是磷酸盐,硫酸盐和柠檬酸盐,因为它们显示出一些潜在的改性吸附剂。与直接吸附在未改性的PDDA层上相比,使用潜在的封闭剂时,PDDA上的胶体颗粒的分散度不会发生变化。系数为100到300。

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