首页> 外文OA文献 >A DATA AWARE APPROACH TO SALVAGE THE ENDURANCE OF PHASE-CHANGE MEMORY
【2h】

A DATA AWARE APPROACH TO SALVAGE THE ENDURANCE OF PHASE-CHANGE MEMORY

机译:挽救相变存储器持久性的数据感知方法

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Phase Change Memory (PCM) is an emerging non-volatile memory technology that could either replace or augment DRAM and NAND flash that are hindered by scalability challenges. PCM suffers from a limited endurance problem that needs to be alleviated before it can be endorsedudinto the memory stack. This thesis is based on the observation that the endurance problem and its ramification depend on the write data. Accordingly, a data-aware approach is applied to salvage the endurance of PCM at three different stages: pre-write fault avoidance, post-write fault tolerance and post-failure recovery.ududThe pre-write fault avoidance stage aims at reducing the endurance cost of servicing write requests. To this end, Cost Aware Flip Optimization (CAFO) is presented as an efficient technique to lessen the endurance degradation. Essentially, CAFO relies on a cost model that captures the endurance cost of programming memory cells based on their already stored values. Subsequently,the write data is encoded into a form that incurs a lower endurance cost than the original write data. Overall, CAFO is capable of reducing the endurance cost by up to 65% more than the existing schemes.ududWorn out PCM cells exhibit a stuck-at fault model which makes the manifestation of errors dependent on the values that cells are stuck at. When a write fails, the data is rewritten inverted. This dissertation shows that applying data inversion at the post-write fault tolerance stage exploits the data dependent nature of errors which enables ECCs to tolerate faults up to double their nominal capability. Furthermore, extensions to RDIS which is an ECC designed specifically for the stuck-at fault model are presented.ududAt the post-failure recovery stage, Data Dependent Sparing is presented to manage bad blocks in PCM. Departing from the observation that defective blocks in the context of the stuck-at fault model still exhibit a low write failure probability due to the data dependent nature of errors, this thesis takes the approach of reusing blocks that are defective yet better-than-bad through a dynamic management of the reserve spare space. Data Dependent Sparing is capable of increasing theudlifetime of PCM by up to 18%.ud
机译:相变存储器(PCM)是一种新兴的非易失性存储技术,可以替代或增强可扩展性挑战所阻碍的DRAM和NAND闪存。 PCM具有有限的耐用性问题,需要先缓解这种问题,然后才能将其背对内存堆栈。本文是基于这样的观察,耐久性问题及其后果取决于写入数据。因此,在三个不同阶段使用数据感知方法来挽救PCM的耐久性:写前避免错误,写后容错和故障后恢复。 ud ud写前避免错误阶段旨在降低服务写请求的持久性成本。为此,提出了成本感知翻转优化(CAFO)作为减少耐久性下降的有效技术。本质上,CAFO依赖于成本模型,该模型基于已存储的值来捕获对存储单元进行编程的耐久性成本。随后,将写入数据编码为一种形式,该形式产生的耐力成本要低于原始写入数据。总的来说,与现有方案相比,CAFO能够将耐用性成本降低多达65%。 ud ud磨损的PCM单元具有卡住的故障模型,该模型使错误的表现取决于单元被卡在的值。当写入失败时,数据将被反向重写。论文表明,在写后容错阶段应用数据反演可充分利用错误的数据相关性,从而使ECC能够容忍的错误达到其标称能力的两倍。此外,还提出了对RDIS的扩展,RDIS是专为卡住的故障模型设计的ECC。 ud ud在故障后恢复阶段,提出了数据相关备用来管理PCM中的坏块。与观察到的问题相反,由于错误的数据相关性,在卡住故障模型的上下文中有缺陷的块仍然表现出较低的写入失败概率,因此本文采用了重用有缺陷但好于坏的块的方法通过动态管理备用空间。数据相关备用能够将PCM的使用寿命延长多达18%。

著录项

  • 作者

    Maddah Rakan;

  • 作者单位
  • 年度 2015
  • 总页数
  • 原文格式 PDF
  • 正文语种 en
  • 中图分类

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号