首页> 外文OA文献 >Load Short-Circuit Protection with Detecting the Gate Voltage and Gate Charge of an IGBT
【2h】

Load Short-Circuit Protection with Detecting the Gate Voltage and Gate Charge of an IGBT

机译:通过检测IGBT的栅极电压和栅极电荷实现负载短路保护

摘要

This paper proposes a new load short-circuit protection method for an IGBT. The proposed method is characterized by detecting not only gate charge but also gate voltage of the IGBT. This results in a shorter protection time, compared to the previous method that detects only the gate charge. A real-time monitoring system using an FPGA, AD converters, and DA converters, is used for the proposed protection method. Experimental results verify that the proposed method achieves a protection time of 390 ns, which is reduced by 68% compared to the previous method.
机译:本文提出了一种新的IGBT负载短路保护方法。所提出的方法的特征在于不仅检测栅极电荷而且检测IGBT的栅极电压。与仅检测栅极电荷的先前方法相比,这可以缩短保护时间。所提出的保护方法使用使用FPGA,AD转换器和DA转换器的实时监控系统。实验结果证明,该方法达到了390 ns的保护时间,与以前的方法相比,减少了68%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号