首页> 外国专利> Back gate voltage generation circuit, four-terminal back gate switching FET, charge / discharge protection circuit using the FET, battery pack incorporating the charge / discharge protection circuit, and electronic device using the battery pack

Back gate voltage generation circuit, four-terminal back gate switching FET, charge / discharge protection circuit using the FET, battery pack incorporating the charge / discharge protection circuit, and electronic device using the battery pack

机译:背栅电压产生电路,四端背栅开关FET,使用该FET的充电/放电保护电路,装有充电/放电保护电路的电池组以及使用该电池组的电子设备

摘要

A back-gate voltage generator circuit generating a back-gate voltage of a four-terminal back gate switching MOSFET for charge and discharge control is disclosed. The back-gate voltage generator circuit includes first and second n-type MOSFETs connected in series through a common source electrode. A voltage at the common source electrode of the first and second n-type MOSFETS connected in series serves as the back-gate voltage of the four-terminal back gate switching MOSFET, and the back-gate voltage is used as a reference voltage for generating signals for controlling the first and second n-type MOSFETS.
机译:公开了一种背栅电压产生器电路,其产生用于充电和放电控制的四端子背栅开关MOSFET的背栅电压。背栅电压发生器电路包括通过公共源电极串联连接的第一和第二n型MOSFET。串联连接的第一和第二n型MOSFET的公共源电极上的电压用作四端背栅开关MOSFET的背栅电压,并且该背栅电压用作生成电压的参考电压用于控制第一和第二n型MOSFET的信号。

著录项

  • 公开/公告号JP5194412B2

    专利类型

  • 公开/公告日2013-05-08

    原文格式PDF

  • 申请/专利权人 株式会社リコー;

    申请/专利号JP20060251999

  • 发明设计人 後藤 智幸;

    申请日2006-09-19

  • 分类号H02J7;H02H7/18;H01M10/44;

  • 国家 JP

  • 入库时间 2022-08-21 16:53:48

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