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Characterization, Microstructure, and Dielectric properties of cubic pyrochlore structural ceramics

机译:立方烧绿石结构陶瓷的表征,微结构和介电性能

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摘要

The (BMN) bulk materials were sintered at 1050°C, 1100°C,1150°C, 1200°C by the conventional ceramic process, and their microstructure anddielectric properties were investigated by Scanning electron microscopy (SEM), X-raydiffraction (XRD), Raman spectroscopy, Transmission electron microscopy (TEM)(including the X-ray energy dispersive spectrometry EDS and high resolutiontransmission electron microscopy HRTEM) and dielectric impedance analyzer.We systematically investigated the structure, dielectric properties and voltagetunable property of the ceramics prepared at different sintering temperatures. The XRDpatterns demonstrated that the synthesized BMN solid solutions had cubic phasepyrochlore-type structure when sintered at 1050°C or higher, and the lattice parameter(a) of the unit cell in BMN solid solution was calculated to be about 10.56Å. Thevibrational peaks observed in the Raman spectra of BMN solid solutions also confirmedthe cubic phase pyrochlore-type structure of the synthesized BMN. According to theScanning Electron Microscope (SEM) images, the grain size increased with increasingsintering temperature. Additionally, it was shown that the densities of the BMN ceramictablets vary with sintering temperature. The calculated theoretical density for the BMNceramic tablets sintered at different temperatures is about 6.7521 . The densityof the respective measured tablets is usually amounting more than 91% and5approaching a maximum value of 96.5% for sintering temperature of 1150°C. Themicrostructure was investigated by using Scanning Transmission Electron Microscope(STEM), X-ray diffraction (XRD). Combined with the results obtained from the STEM andXRD, the impact of sintering temperature on the macroscopic and microscopic structurewas discussed.The relative dielectric constant ( ) and dielectric loss ( ) of the BMN solidsolutions were measured to be 161-200 and (at room temperature and100Hz-1MHz), respectively. The BMN solid solutions have relative high dielectricconstant and low dielectric loss. With increasing sintering temperature, the dielectricconstant showed the maximum at 1150°C. The leakage current of BMN ceramic materialis extraordinary small. When the voltage and thickness of the BMN capacitor are 4000Vand 300um, the leakage current amounts only about 0.13-0.65 . The excellentphysical and electrical properties make BMN thin films promising for potential tunablecapacitor applications.
机译:(BMN)块状材料通过常规陶瓷工艺在1050°C,1100°C,1150°C,1200°C的条件下烧结,并通过扫描电子显微镜(SEM),X射线衍射(XRD)研究了它们的微观结构和介电性能),拉曼光谱,透射电子显微镜(TEM)(包括X射线能量色散谱EDS和高分辨率透射电子显微镜HRTEM)和介电阻抗分析仪,我们系统地研究了在不同条件下制备的陶瓷的结构,介电性能和电压可调性烧结温度。 XRD图谱表明,合成的BMN固溶体在1050℃以上烧结时具有立方相烧绿石型结构,BMN固溶体中晶胞的晶格参数(a)约为10.56Å。在BMN固溶体的拉曼光谱中观察到的振动峰也证实了合成BMN的立方相烧绿石型结构。根据扫描电子显微镜(SEM)图像,晶粒尺寸随着烧结温度的升高而增加。另外,显示出BMN陶瓷片的密度随烧结温度而变化。在不同温度下烧结的BMN陶瓷片的计算理论密度约为6.7521。对于1150℃的烧结温度,各个测量的片剂的密度通常总计大于91%并且接近最大值96.5%。通过扫描透射电子显微镜(STEM),X射线衍射(XRD)研究了组织。结合从STEM和XRD得到的结果,讨论了烧结温度对宏观和微观结构的影响.BMN固溶体的相对介电常数()和介电损耗()测定为161-200和(在室温下)和100Hz-1MHz)。 BMN固溶体具有相对较高的介电常数和较低的介电损耗。随着烧结温度的升高,介电常数在1150°C时显示出最大值。 BMN陶瓷材料的泄漏电流非常小。当BMN电容器的电压和厚度为4000V和300um时,泄漏电流仅为0.13-0.65左右。优异的物理和电学性能使BMN薄膜有望用于潜在的可调电容器应用。

著录项

  • 作者

    Li Yangyang;

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  • 年度 2013
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  • 原文格式 PDF
  • 正文语种 en
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