Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy

摘要

We show that "single" stacking fault 3C inclusions formed in 4H-SiC p-i-n diodes behave as electron quantum wells (QWs) with the QW energy depth of ∼0.25 eV below 4H-SiC conduction band minimum, by measuring the Schottky barriers on and away from inclusions with ballistic electron emission microscopy (BEEM). The Schottky barrier on the 4H area ([11-20] oriented) is measured to be essentially the same as (0001) plane studied previously, indicating that the interface pinning effects on both crystal faces are almost identical. Additionally, BEEM current amplitude is observed to be very sensitive to subsurface damage induced by polishing.