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Transient Structures and Possible Limits of Data Recording in Phase-Change Materials

机译:相变材料中数据记录的瞬态结构和可能的限制

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摘要

Phase-change materials (PCMs) represent the leading candidates for universal data storage devices, which exploit the large difference in the physical properties of their transitional lattice structures. On a nanoscale, it is fundamental to determine their performance, which is ultimately controlled by the speed limit of transformation among the different structures involved. Here, we report observation with atomic-scale resolution of transient structures of nanofilms of crystalline germanium telluride, a prototypical PCM, using ultrafast electron crystallography. A nonthermal transformation from the initial rhombohedral phase to the cubic structure was found to occur in 12 ps. On a much longer time scale, hundreds of picoseconds, equilibrium heating of the nanofilm is reached, driving the system toward amorphization, provided that high excitation energy is invoked. These results elucidate the elementary steps defining the structural pathway in the transformation of crystalline-to-amorphous phase transitions and describe the essential atomic motions involved when driven by an ultrafast excitation. The establishment of the time scales of the different transient structures, as reported here, permits determination of the possible limit of performance, which is crucial for high-speed recording applications of PCMs.
机译:相变材料(PCM)代表了通用数据存储设备的主要候选产品,这些设备充分利用了其过渡晶格结构的物理特性的巨大差异。在纳米级,确定其性能至关重要,而性能最终取决于所涉及的不同结构之间的转化速度极限。在这里,我们报告使用超快电子晶体学观察到的晶体碲化锗(一种典型的PCM)纳米膜的瞬态结构的原子尺度分辨率观察结果。发现从最初的菱面体相到立方结构的非热转变在12 ps内发生。在更长的时间范围内,达到数百皮秒的纳米膜平衡加热,只要激活了高激发能,就可以使系统趋于非晶化。这些结果阐明了基本步骤,这些基本步骤定义了晶体向非晶相变转变的结构路径,并描述了由超快激发驱动时所涉及的基本原子运动。如此处报道的,建立不同瞬态结构的时间标度可以确定可能的性能极限,这对于PCM的高速记录应用至关重要。

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