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Microstructuring in LiNbO3: a route to MEMS devices in piezoelectric crystal media

机译:<标题> Linbo <公式> 3 :压电晶体介质中MEMS器件的路由

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摘要

Ferroelectric materials such as LiNbO3 and LiTaO3 offer many potential advantages over silicon for MEMS structures and self-actuating miniature devices. These materials possess numerous useful intrinsic properties such as piezoelectricity, pyroelectric and electro-optic coefficients, enabling the construction of micron-scale cantilevers, membranes, tips and switches. So far however, reliable and accurate methods for machining and microstructuring LiNbO3 single crystals have been lacking. We have recently been exploring several such methods, which are sensitive to ferroelectric domain orientation. A sample that has been domain-engineered shows a large difference in etch characteristics: the +z face does not etch at all, whereas the -z face etches normally. Microstructured devices can be fabricated therefore, via spatially selective domain poling followed by etching. The extreme sensitivity of the etch process to domain orientation has enabled us to fabricate ridge waveguides for electro-optic modulator applications, alignment grooves for efficient fibre-pigtailing to LiNbO3 modulators, and micro-cantilevers using a novel technique of contact bonding of dissimilar ferroelectric hosts.
机译:诸如LiNbO3和LiTaO3之类的铁电材料在MEMS结构和自驱动微型器件方面比硅具有许多潜在的优势。这些材料具有许多有用的固有特性,例如压电性,热电系数和电光系数,从而可以构建微米级的悬臂,膜,尖端和开关。然而,到目前为止,仍缺乏可靠且准确的方法来加工和微结构化LiNbO3单晶。我们最近一直在探索几种对铁电畴取向敏感的方法。经过域工程处理的样本显示出蚀刻特性的巨大差异:+ z面完全不蚀刻,而-z面正常蚀刻。因此,可以通过空间选择性畴极化然后进行蚀刻来制造微结构器件。蚀刻过程对畴取向的极高灵敏度使我们能够制造出用于电光调制器应用的脊形波导,用于有效光纤到LiNbO3调制器的对准凹槽以及使用异种铁电体接触键合的新型技术的微悬臂梁。

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